unisonic technologies co., ltd ULB122 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r213-014,c npn triple diffused planar type high voltage transistor ? description the utc ULB122 is a medium power transistor designed for use in switching applications. ? features * high breakdown voltage * low collector saturation voltage * fast switching speed * halogen free ? ordering information pin assignment ordering number package 1 2 3 packing ULB122g-xx-tm3-t to-251 b c e tube
ULB122 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r213-014,c ? absolute maximum rating (t a =25c) parameter symbol ratings unit collector-base voltage v cbo 600 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 6 v dc 800 ma collector current pulse i c 1600 ma dc 100 ma base current pulse i b 200 ma total power dissipation (t c =25c) p d 20 w junction temperature t j 150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values be yond which the device coul d be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics collector-base breakdown voltage bv cbo i c =100a 600 v collector-emitter breakdown voltage bv ceo i c =10ma 400 v emitter-base breakdown voltage bv ebo i e =10a 6 v collector cutoff current i cbo v cb = 600 v 10 a collector cutoff current i ceo v cb =400v 10 a emitter cutoff current i ebo v eb =6v 10 a on characteristics h fe1 v ce =10v, i c =0.1a 10 40 dc current gain(note) h fe2 v ce =10v, i c =0.5a 10 i c =100ma, i b =20ma 400 collector-emitter saturati on voltage (note) v ce(sat) i c =300ma, i b =60ma 800 mv base-emitter saturation voltage (note) v be(sat) i c =100ma, i b =20ma 1 v switching characteristics fall time t f v cc =100v, i c =0.3a, i b1 =-i b2 =0.06a 0.6 s note: pulse test : pulse width 380s, duty cycle 2% ? classification of h fe1 rank b1 b2 b3 b4 b5 b6 range 10 ~ 17 13 ~ 22 18 ~ 27 23 ~ 32 28 ~ 37 33 ~ 40
ULB122 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r213-014,c ? typical characteristics 1 1 collector current, i c (ma) 10 current gain vs. collector current 10 1000 100 100 h fe @v ce = 10v 1 1 collector current, i c (ma) 10 100 saturation voltage vs. collector current 100 1000 10000 v ce(sat) @i c = 5i b 1000 10 1 10 100 capacitance vs. reverse-biased voltage 0.1 reverse-biased voltage (v) 10 100 1 1 1 forward biased voltage (v) safe operating area 1000 10 10000 100 1000 100 10 p t =1ms p t =100ms p t =1s
ULB122 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r213-014,c ? typical characteristics(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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